? 2006 ixys all rights reserved ds99337e(03/06) polarhv tm hiperfet power mosfet v dss = 600 v i d25 = 40 a r ds(on) 140 m t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode features ? international standard package ? encapsulating epoxy meets ul 94 v-0, flammability classification ? minibloc with aluminium nitride isolation z fast recovery diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = 4 a 140 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c40a i dm t c = 25 c, pulse width limited by t jm 110 a i ar t c = 25 c48a e ar t c = 25 c70mj e as t c = 25 c 2.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 2 p d t c = 25 c 625 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5 / 13 nm/lb.in. terminal connection torque 1.5 / 13 nm/lb.in. weight 30 g g d s s minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. ixfn 48n60p
ixys reserves the right to change limits, test conditions, and dimensions. ixfn 48n60p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 24 a, pulse test 35 53 s c iss 8860 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 850 pf c rss 60 pf t d(on) 30 ns t r v gs = 10 v, v ds = 24 a 25 ns t d(off) r g = 2 (external) 85 ns t f 22 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 24 a 50 nc q gd 50 nc r thjc 0.2 c/w r thcs sot-227b 0.05 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 48 a i sm repetitive 110 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 200 ns q rm v r = 100v 0.8 c i rm 6.0 a sot-227b (ixfn) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfn 48n60p fig. 2. exte nde d output characte ris tics @ 25 o c 0 20 40 60 80 100 120 0 4 8 12 16 2 0 2 4 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 40 45 50 02468101214 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 50 012 3456 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on ) norm alize d to i d = 24a value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 48a i d = 24a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 24a value vs. drain current 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 20406080100120140 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. cas e tem perature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfn 48n60p fig. 11. capacitance 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 300v i d = 24a i g = 10ma fig. 7. input adm ittance 0 10 20 30 40 50 60 70 80 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source curre nt vs . source-to-drain voltage 0 20 40 60 80 100 120 140 160 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 13. m axim um trans ient the rm al re s is tan ce 0.00 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
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